Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1630830 | Materials Today: Proceedings | 2016 | 5 Pages |
Abstract
Photoluminescence studies were performed on the etched porous silicon using a micro-Raman Spectrometer. Three luminescence peaks, two sharp peaks at 1.11 eV (1117 nm) and at 1.20 eV (1033 nm) in the infra-red region and a broad peak at 1.83 eV (678 nm) in the visible region were observed. To understand the significance of these luminescence features found in porous silicon, we compared the results from porous silicon with that of bulk silicon and Li intercalated porous silicon.
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Authors
R. Mohandoss, C. Lakshmanan, K.K. Madapu, R.N. Viswanath, S. Dash, A.K. Tyagi,