Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1634996 | Rare Metals | 2008 | 6 Pages |
Abstract
Polycrystalline CuInS2 (CIS) films were prepared by sulphurization of Cu-In films. The surface morphology and phase composition of the as-grown film, the KCN-etched film, and the annealed KCN-etched film were investigated. During the sulphurization, the secondary CuxS phase segregated on the surface of the as-grown films. To improve the crystalline quality of CuInS2 films, a series of post-grown treatments, such as KCN-etching and vacuum annealing KCN-etched films, were performed on the as-grown films. Both as-grown and post-treated films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS). The results indicated that a CuxS secondary phase segregated on the surface of the as-grown film, which could be removed effectively by KCN etching. After the vacuum annealing treatment, the KCN-etched film had a sphalerite structure with (112) preferred orientation. Meanwhile, the crystalline quality of the CIS film was significantly improved, which provided a novel method to improve the performance of thin film solar cells.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Youhua YAN, Yingchun LIU, Ling FANG, Haihua ZHAO, Deren LI, Zhichao LU, Shaoxiong ZHOU,