Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1635258 | Rare Metals | 2006 | 5 Pages |
Abstract
Nitrogen-doped, p-type ZnO thin films were grown successfully on sapphire (0001) substrates by using atomic layer epitaxy (ALE). Zn(C2H5)2[Diethylzinc, DEZn], H2O and NH3 were used as a zinc precursor, an oxidant and a doping source gas, respectively. The lowest electrical resistivity of the p-type ZnO films grown by ALE and annealed at 1000°C in an oxygen atmosphere for 1 h was 18.3 Ω·cm with a hole concentration of 3.71 à 1017 cmâ3. Low temperature-photoluminescence analysis and time-dependent Hall measurement results support that the nitrogen-doped ZnO after annealing is a p-type semiconductor.
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Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Chongmu LEE, Jongmin LIM, Suyoung PARK, Hyounwoo KIM,