Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1635299 | Rare Metals | 2006 | 5 Pages |
Abstract
Cu2ZnSnS4(CZTS) thin films were successfully prepared by sulfurization of ion bean sputtered precursors on soda-lime glass substrate. The single phase of stannite-type structure CZTS films were obtained as revealed in EDS and XRD analysis when the ratios of the constituents of CZTS thin films are close to stoichiometric by optimizing the conditions of precursor preparation and sulfurization. A low sheet resistivity as about 0.156 Ï·cm and a high absorption coefficient as 1 à 104 cmâ1 were achieved in this method by Hall effect measurements and UV-VIS spectrophotometer. The optical band-gap energy of the CZTS sample is about 1.51 eV, which is very close to the optimum value for a solar-cell absorber.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Jun ZHANG, Lexi SHAO, Yujun FU, Erqing XIE,