| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1635360 | Rare Metals | 2006 | 4 Pages |
Abstract
ø200 mm silicon single crystals were grown in the ø450 mm hot zone of a Czochralski (CZ) furnace. By modifying the pattern and the velocity of the argon flow, the silicon single crystals with different oxygen concentrations were obtained. Through numerical simulation, the velocity of the argon gas flow was plotted for the first time. The experiment results were analyzed and the optimum condition of the argon flow with the lowest oxygen concentration was obtained.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Bingyan REN, Long ZHAO, Xiuling ZHAO, Huixian WANG, Zhongqian CAO, Huimin ZHU, Hongbo FU,