Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1635380 | Rare Metals | 2006 | 4 Pages |
Abstract
The atomic and electronic structures of the c threading dislocations with an edge or screw character were compared using a tight binding formalism which takes into account charge transfer. The two dislocations do not exhibit dangling bonds. While the screw dislocation contains only constrained Ga-N bonds, the edge dislocation contains Ga-Ga and N-N wrong bonds. Both dislocations are found to induce shallow and deep gap states.
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Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Imad BELABBAS, Jun CHEN, Pierre RUTERANA, Guanghui YU, Gérard NOUET,