Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1637257 | Transactions of Nonferrous Metals Society of China | 2012 | 6 Pages |
Abstract
A reuse fabrication module using micro electrochemistry (MECM) with a round-ball tool to remove the defective In2O3SnO2 thin film from the surfaces of digital paper display was presented. The etching effect improves that the number of the round-balls decreases for promoting the concentration of electric power and increasing discharge space. Using a small size of the round-ball tool takes less time for the same amount of In2O3SnO2 layer removal since the effect of MECM is easily developed for supplying of sufficient electrochemical power. A higher feed rate of the poly ethylene terephthalate (PET) diaphragm combines with enough electric power to drive fast etching rate. A pulsed direct current can improve the effect of dreg discharge and is advantageous to couple this current with the fast feed rate of the workpiece. Through the ultra-precise etching of In2O3SnO2, the optoelectronic semiconductor industry can effectively reuse the defective products, reducing production costs. This precision etching process is of high efficiency and requires only a short period of time to remove the In2O3SnO2 nanostructures.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
P.S. PA,