| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1637766 | Transactions of Nonferrous Metals Society of China | 2013 | 5 Pages |
Abstract
The effects of surface cleaning to eliminate the surface oxides formed on Cu seed layer with dilute H2SO4 solution were investigated. Cu seed layer formed on Ti/Si(100) wafer by sputter deposition was exposed to air to grow native Cu oxide. Dilute H2SO4 solutions and/or TS-40A alkaline soak cleaner were used to remove the native Cu-oxide. After mainly carbon groups (such as C═O) on surface of Cu seed layer were removed by pretreatment of TS-40A alkaline solution, subsequently, dilute H2SO4 acid solution removed Cu-oxides (Cu2O and CuO) as well as a lot of O═C and Cu(OH)2.
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