Effect of process parameters on electrical, optical properties of IZO films produced by inclination opposite target type DC magnetron sputtering

IZO films were deposited onto PET substrate at room temperature with the inclined opposite target type DC magnetron sputtering equipment, in which a sintered oxide IZO target (doped with 10% ZnO, packing density of 99.99%) was used. The effects of total sputtering pressure and film thickness on IZO films properties were studied. All the films produced at room temperature have a amorphous structure, irrespective of the total sputtering pressure and film thickness. A resistivity of the order of 10−4 Ω·cm was obtained for IZO films deposited at lower pressure (film thickness of 190 nm). The resistivity of IZO films deposited at room temperature depends on film thickness and shows a minimum at a thickness of 530 nm.