| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1639192 | Transactions of Nonferrous Metals Society of China | 2011 | 6 Pages |
Abstract
Thermodynamic models for molecular-beam epitaxy (MBE) growth of ternary III-V semiconductor materials are proposed. These models are in agreement with our experimental materials InGaP/GaAs and InGaAs/InP, and reported GaAsP/GaAs and InAsP/InP in thermodynamic growth. The lattice strain energy ÎG and thermal decomposition sensitive to growth temperature are demonstrated in the models simultaneously. ÎG is the function of the alloy composition, which is affected by flux ratio and growth temperature directly. The calculation results reveal that flux ratio and growth temperature mainly influence the growth process. Thermodynamic model of quaternary InGaAsP/GaAs semiconductor material is discussed also.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Zhi-cheng YE, Yong-chun SHU, Xue CAO, Liang GONG, Biao PI, Jiang-hong YAO, Xiao-dong XING, Jing-jun XU,