Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1640310 | Transactions of Nonferrous Metals Society of China | 2009 | 5 Pages |
Abstract
SrBi2−χNdχNb2O9 (χ=0, 0.1, 0.2 and 0.4) bismuth layer-structured ferroelectric ceramics were prepared by the solid-state reaction sintering method. The accurate position of Nd element in SrBi2−χNdχNb2O9 ceramics was determined by the X-ray Rietveld method and Synchrotron radiation X-ray absorption fine structure (XAFS) technology. The partial substitution of Nd3+ for Bi3+ leads to the decrease in the distortion of NbO6 octahedron for SrBi2−χNdχNb2O9 ceramics and also lowers the piezoelectric properties of SrBi2−χNdχNb2O9 ceramics. Meanwhile, the temperature coefficient of resonant frequency (TCF) decreases when Nd element partially replaces Bi element in SrBi2−χNdχNb2O9 ceramics.
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