Electroless deposition of W-doped Ag films onto p-Si(100) from diluted HF solution

Tungsten-doped silver films were prepared by immersing hydrogen-terminated silicon wafers into the solution of 2.5 mmol/L [Ag2WO4]+0.1 mol/L HF at 50 °C. Their growth and composition were characterized with atomic force microscopy and X-ray photoelectron spectroscopy, respectively. The effect of tungstate ions on the deposition of silver was investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) by comparing W-doped Ag film with Ag film. It is found that the molar fraction of tungsten in the deposits is about 2.3% and the O to W molar ratio was about 4.0 and W-doped Ag films have good anti-corrosion in air at 350 °C. The doping of tungsten cannot change the deposition of silver.