Effect of ion implantation upon erosion resistance of polyimide films in space environment

The atomic oxygen (AO) resistance of Si ion implanted polyimide films in the ground-based AO simulation facility was investigated by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The results show that at the initial stage of AO exposure the implanted sample has a small mass change, and then is stabilized. The erosion yield of the implanted polyimide film decreases by about two orders of magnitude compared with that of the polyimide film. The analysis through XPS and AES indicates that a continuous high-quality protective oxide-based (SiO2) surface layer is formed on the implanted polyimide films after the AO exposure. It can provide high-quality erosion protection for these materials. The implanted polyimide fully restores its original color and the carbonization effect disappears on the whole after AO exposure. Thermal-optical properties and surface morphology of the implanted polyimide materials are not altered. The modified materials have a markedly increased erosion resistance in AO environment.