Ag-N dual acceptor doped p-type ZnO thin films by DC reactive magnetron co-sputtering

•p-type ZnO: Ag,N thin films was deposited by DC co-sputtering technique.•Annealing treatment improved the crystalline quality and conductivity of the films•p-type conductivity is greatly enhanced by the dual acceptor doping with Ag and N.•High hole concentration (3.17×1019 cm−3) was obtained after annealing treatment.

ZnO p-type thin films were deposited by dual acceptor co-doping using nitrogen and silver via DC reactive magnetron co-sputtering. As precursor material were used a Zn and an Ag metallic targets with a purity of 99.99%. X-ray energy dispersive spectroscopy (EDX) confirmed the presence of Ag and N in ZnO: Ag,N films. The electrical properties were explored by Hall Effect measurement and showed a low hole concentration for the as-deposited ZnO: Ag,N film. However, after annealing treatment, the films remained p-type and the electrical properties were improved significantly. The best electrical properties showed a low resistivity of 8.56×10−3 Ωcm, Hall mobility of 23 cm2/Vs and a very high hole concentration of 3.17×1019 cm−3.