Growth mechanism of In-doped β-Ga2O3 nanowires deposited by radio frequency powder sputtering

We investigate the growth mechanism of In-doped β-Ga2O3 nanowires (NWs) deposited using radio frequency powder sputtering. Although the growth sequence of the doped NWs is similar to that of the undoped β-Ga2O3 NWs, the formation of self-assembled In clusters is more favorable compared to Ga clusters. Clusters of In act as seeds for initiating the growth of In-doped β-Ga2O3 NWs through a self-catalytic vapor-liquid-solid mechanism, while Ga seeds initiate the growth of undoped β-Ga2O3 NWs by the same mechanism. We also observed zigzag NWs formed by alternating NW growth directions.