| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1641434 | Materials Letters | 2016 | 5 Pages |
•Pure vanadium thin films were GLAD deposited with incident angles of 0, 20 and 85°.•The films were annealed in atmospheric pressure (air) and vacuum conditions.•The resistivity evolution was monitored with increasing annealing temperatures.•Metallic-like electrical properties and columnar features are preserved in vacuum.•VO2 phase is formed in air for α=0 and 85° samples.
Pure V thin films were dc sputtered with different pressures (0.4 and 0.6 Pa) and particle incident angles α of 0°, 20° and 85°, by using the GLancing Angle Deposition (GLAD) technique. The sputtered films were characterized regarding their electrical resistivity behaviour in atmospheric pressure and in-vacuum conditions as a function of temperature (40–550 °C), in order to control the oxidation process. Aiming at comprehending the oxidation behaviour of the samples, extensive morphological and structural studies were performed on the as-deposited and annealed samples. Main results show that, in opposition to annealing in air, the columnar nanostructures are preserved in vacuum conditions, keeping metallic-like electrical properties.
