Article ID Journal Published Year Pages File Type
1641435 Materials Letters 2016 4 Pages PDF
Abstract

•Wurtzite-structured aluminum nitride (AlN) hexagonal bipyramids were prepared.•The preferred growth direction of the AlN hexagonal bipyramids is [0001].•The AlN hexagonal bipyramids showed near-band edge emission at 512 nm.

Wurtzite-structured aluminum nitride (AlN) hexagonal bipyramids were prepared via a carbothermal reduction nitridation method using alumina and carbon as the raw materials. The growth of the AlN hexagonal bipyramids is dominated by the vapor-solid (VS) mechanism with Fe2O3, SiO2 and Na2O acting as mineralizers under alternate gas pressures. The preferred growth direction of the AlN hexagonal bipyramids is [0001]. Photoluminescence spectra of the AlN hexagonal bipyramids showed near-band edge emission at 512 nm at room temperature. The AlN hexagonal bipyramids might be useful for optical micro-devices.

Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
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