Solid solution synthesis of (In1−xGax)2Se3 Nanocrystals (0≤x≤1) by a triethylene glycol based solution process

•(In1−xGax)2Se3 nanocrystals (0≤x≤1) were synthesized by TEG based solution process.•Solid solution stoichiometries were well controllable in the range of 0≤x≤1.•Relationship between phases and chemical stoichiometries was demonstrated.•Tunable band gap energies with phase structures and stoichiometries were confirmed.

(In1−xGax)2Se3 nanocrystals (0≤x≤1) were synthesized by a facile, air pressure ethylenediamine/N-dodecyl mercaptan co-assisted triethylene glycol solution process using InCl3·4H2O, GaCl3 and Se powder as precursors. The synthesized products were deposited on clean glass substrates by nanocrystals ink dip-coating method, and then were annealed at 500 °C for 1 h. Morphologies, solid solution stoichiometries, phase compositions, band gap energies and Hall parameters of the synthesized (In1−xGax)2Se3 nanocrystals with solid solution range of 0≤x≤1 were investigated. Results showed that the solid solution stoichiometry could be well tuned by changing precursor atom ratios in the reaction solution. (In1−xGax)2Se3 products showed a phase transformation from wurtzite to zinc-blende in the range from x=0.4–0.5, accompanying change of band gap energies and Hall parameters.