Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1641607 | Materials Letters | 2016 | 4 Pages |
Abstract
Nitrogen doped ZnO films were prepared by magnetron sputtering. We studied the influence of nitrogen partial pressure pn and oxygen partial pressure po on the microstructure, morphology and optical properties of the thin films. The results show that different defects influence the structure and optical behavior of the films. Doping-related tensile stress turns compressive, owing to a different N-doping form in the films. Red-shift of absorption edge was observed with increasing pn and decreasing po. Band-gap narrowing is improved by increasing nitrogen substitute and oxygen vacancies.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Huiping Lu, Peipei Zhou, Haonan Liu, Linao Zhang, Yang Yu, Yinglan Li, Zhi Wang,