Growth and characterization of InAs/InAsSb superlattices by metal organic chemical vapor deposition for mid-wavelength infrared photodetectors

InAs/InAsSb superlattices were grown on (001) GaSb substrates by metal organic chemical vapor deposition for potential applications as mid-infrared optoelectronic devices. Atomic force microscopy, X-ray diffraction, transmission electron microscopy and photoluminescence emission were used to characterize the grown structures. The photoluminescence emissions from InAs/InAsSb superlattices were performed over the temperature range from 11 K to 300 K. The Varshni and Bose-Einstein parameters determined for energy gap were extracted from the photoluminescence spectra by the fitting procedures. The mid-infrared InAs/InAsSb superlattices showed a temperature change of 0.32 meV/K. The value is smaller than that of HgCdTe and InSb, making them more desirable for high operating temperature infrared devices.