Fabrication of zinc stannate based all-printed resistive switching device

This paper describes resistive switching in ZnSnO3 thin film deposited by electrohydrodynamic atomization. The field emission scanning electron microscope analysis showed uniform surface morphology for thin films. The active layer, a thin film comprised of ZnSnO3 nano-cubes was printed between screen printed silver (Ag) electrodes on glass substrate. Resistive switching behavior of the Ag/active layer/Ag sandwich structure was confirmed by current voltage analyses. The 3×3 array of memristors thus fabricated, showed characteristic OFF to ON (high resistance to low resistance) transition at low voltages, when operated between ±2 V, at 100 nA compliance currents. The memristor array exhibited stable room temperature current-voltage hysteresis, low power operation, retentivity in excess of 24 h. An ROFF/RON≈10:1 was observed at VRead=100 mV for more than 100 voltage stress cycles. All memory bits showed similar current voltage characteristics with respect to resistive switching parameters.