| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1642354 | Materials Letters | 2015 | 4 Pages |
•Annealing at 1223 K removes H and greatly modifies the luminescence of ZnO nanorods.•VZn–H complex exists in the hydrothermally grown ZnO materials.•VZn and VZn–H complex are responsible for the different deep level emission.
We carry out a comprehensive photoluminescence (PL) study on hydrothermally grown ZnO nanorods to provide insights into the role of hydrogen impurity in ZnO materials. Annealing at 1223 K greatly modifies the PL properties of the ZnO nanorods, both for the excitonic and deep level emissions. The suppression of excitons bound to H donors as well as enhancement of deep level emission after annealing suggests the removal of H from ZnO lattice. The temperature-dependent behavior of the deep level emissions suggests the formation of VZn–Hn complexes.
