Tin catalyzed silicon nanowires prepared by magnetron sputtering

Tin (Sn) catalyzed silicon nanowires (Si NWs) were grown by the method of magnetron sputtering at temperatures ranging from 250 to 400 °C. As the growth temperature increases from 250 to 400 °C, the length and density of Si NWs first increases and then decreases. A mixed phase of amorphous and nanocrystalline silicon exists in the synthesized Si NWs, and the crystallization degree of Si NWs increases rapidly with further increase in growth temperature. Sn nanoparticles on the top of Si NWs can be observed, which indicates that the vapor-liquid-solid (VLS) growth mechanism is responsible for Si NWs growth.