| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1642607 | Materials Letters | 2015 | 5 Pages |
Abstract
Bipolar resistive-switching (RS) memories were demonstrated based on an Ag/amorphous-carbon (a-C)/Pt sandwich structure. Here, the Ag-nanoclusters (NCs) were embedded into the a-C film via the sputtering deposition and thermal agglomeration. Versus the device without Ag-NCs, the embedding of the Ag-NCs in the a-C film favors the formation of incomplete Ag conducting filaments (CFs). This can act as tip electrodes for the RS. Therein, the local electric field can be enhanced and concentrated and lead to a simplified CF structure. Therefore, embedding Ag-NCs with a proper concentration into the electrolyte layer can effectively decrease the forming/switching voltages and improve the RS uniformity.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Lei Zhang, Haiyang Xu, Zhongqiang Wang, Xiaoning Zhao, Jiangang Ma, Yichun Liu,