| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1643609 | Materials Letters | 2014 | 4 Pages |
•The ferroelectric properties of Bi4Ti3O12 thin films are enhanced obviously after doping Zr.•The fatigue behaviors of Bi4Ti3O12 thin films are enhanced obviously after doping Zr.•The enhanced ferroelectricity is attributed to the ionic displacement and the octahedral distortion.
Single-phase pure and Zr doped Bi4Ti3O12 thin films have been prepared via the solution–gelation technique. It shows that ferroelectric properties are enhanced obviously after doping Zr. Such improved ferroelectric properties are attributed to the lattice parameter change, which leads to ionic displacement and octahedral distortion after doping Zr. Meanwhile, the fatigue behaviors of the present films were improved obviously after doping Zr. The present work provides an available way of enhancing ferroelectric polarization and fatigue properties of Bi4Ti3O12 based thin films and accelerating its application in ferroelectric storage devices.
