Enhanced formation of Si nanocrystals in silicon-rich oxide implanted with Ni

We have studied the effects of the presence of Ni on the formation of Si NCs by thermal annealing of silicon-rich oxide (SiOx) films implanted with different Ni fluences. The formation of Si NCs was found to strongly depend on the Ni concentration. Moderate Ni concentrations were found to enhance the formation of Si NCs, but the presence of large Ni concentrations results in the formation of NiSi2 NCs rather than Si NCs. It is proposed that the results are a consequence of Ni-induced crystallization of amorphous Si clusters.