Article ID Journal Published Year Pages File Type
1643693 Materials Letters 2014 4 Pages PDF
Abstract

•Cs-doped Bi2Te3 nanostructures were synthesized by a solvothermal route at 100 °C.•EDX analysis confirmed the elemental purity of the nanostructures.•The direct band gap for the doped sample was found to be 2.30 eV.•The doped sample shows the enhancement of current by 3 orders of magnitude (μA–mA).

A new approach for doping of cesium atoms in Bi2Te3 nanostructures using the inexpensive solvothermal route at a temperature of 100 °C is presented. X-ray diffraction (XRD) pattern, scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX), UV–vis spectral studies and electrical studies (I–V measurements) were carried out for both pure Bi2Te3 and Cs-doped Bi2Te3 nano-samples. The experimental outcome shows that the 2 at.% doping of cesium results in the decrement of band gap and significant enhancement of the current by 3 orders of magnitude. The experimental observations also show that the doping effect of Cesium ions in Bi2Te3 nanostructures changes the linear behavior of I–V curve.

Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
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