Structural and magnetic properties of Er-implanted GaN films

●Room temperature ferromagnetic GaN:Er films were fabricated.●We studied the effects of implantation with Er ions on the structural properties of GaN.●Obvious magnetic anisotropy characteristics of GaN:Er film were observed and its easy axis of magnetization is perpendicular to the c-axis.●The formation of BMP plays an important role in the ferromagnetic origin of GaN:Er films.

Ferromagnetic GaN:Er films have been successfully fabricated by implanting Er+ into unintentionally-doped GaN, and subsequent rapid thermal annealing at 800 °C. No secondary phase was observed within the sensitivity of XRD analysis. HRXRD results show a clear broad feature and a satellite peak on the left side of GaN:Er (0002) peak. The reduction of full width at half maximum of XRD rocking curves suggested the improvement of crystal quality through 800 °C annealing. Clear room temperature ferromagnetism and magnetic anisotropy have been observed. The possible origin of ferromagnetism was discussed briefly.