Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1644884 | Materials Letters | 2013 | 4 Pages |
Abstract
Structural defects, found in gallium-phosphide nanowires, grown from Au catalyst on InP ã111ãB substrate using metal organic molecular beam epitaxy, were extensively studied using Transmission Electron Microscopy (TEM). Several types of growth were analyzed: pure axial, axial-lateral and self catalyzed. Pure axially grown nanowires were found to be single crystals with wurzite crystal structure and Ga-polarity. These nanowires contained threading edge dislocation along the wire axis. The axial-lateral nanowires grew with zinc blend crystal structure and exhibited polycrystalline nature. Self catalyzed single crystalline nanowires possessed wurzite crystal structure with P-polarity and exhibited threading edge dislocations along their axis.
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Authors
Ya'akov Greenberg, Sergei Remennik, Shimon Cohen, Dan Ritter, Louisa Meshi,