| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1645129 | Materials Letters | 2013 | 4 Pages |
•Synthesis of ZrON/Si layers by oxidation/nitridation of metal Zr in the N2O/Ar ambient.•Measurement of optical properties of ZrON/Si layer structures with spectroscopic ellipsometry.•Optical parameters of the interface layer.
ZrON/Si(100) layer structure formation has been produced by oxidation/nitridation of sputtered Zr metal in N2O/Ar ambient at 500–900 °C. Micromorphology and structural properties of the films have been evaluated by scanning electron microscopy, atomic force microscopy, and reflection high-energy electron diffraction. Dispersive optical properties of the ZrON/Si reflection system have been studied with spectroscopic ellipsometry. A drastic increase of SiO2-based interface layer thickness has been found at 700–900 °C.
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