Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1645252 | Materials Letters | 2013 | 4 Pages |
•Excitation- and power-dependent photoluminescence from oxidized Ge wafer/microcrystallites with nanoholes.•Red-shift is observed as the excitation wavelength is increased.•Blue-shift is observed when the power density is increased.
Wafer/microcrystallites of oxidized Ge with holes/nanoholes synthesized by thermal oxidation strategy from Ge wafer/microcrystallites can convert one wavelength to another. Both oxidized Ge wafer and microcrystallites shows excitation- and power-dependent luminescence. Red-shift is observed as the excitation wavelength is increased, while blue-shift is observed as power density is increased. Over all, blue-green-yellow-orange luminescence is observed depending on the excitation wavelength and the morphology of oxidized Ge. The various defects level associated with germanium-oxygen vacancies in GeO2 and Ge/GeO2 interface are responsible for the excitation-dependent luminescence. Being a light-conversion material, oxidized Ge is expected to find potential applications in solid-state lighting, photovoltaic devices and photocatalysis.