| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1645562 | Materials Letters | 2013 | 4 Pages |
The TiO2 films were prepared on Pt/Ti/SiO2/Si substrate by a laser chemical vapor deposition method. With increasing laser power (PL) from 48 to 98 W, the deposition temperature (Tdep) monotonously increased from 849 to 929 K. At Tdep=849 K (PL=48 W), the rutile TiO2 film was prepared with strong (110) and (200) peaks. With increasing Tdep from 849 to 883 K (PL=71 W), the intensity of (110) peak increased. The (110)-oriented TiO2 films were obtained for Tdep beyond 903 K (PL=81 W). All TiO2 films showed faceted grains with the columnar cross-section. With increasing Tdep, the grain size increased and the column became wider. The high deposition rate (Rdep) ranged from 13.04 to 24.84 μm h−1.
► Rutile TiO2 films were prepared on Pt/Ti/SiO2/Si substrate by laser CVD. ► With increasing laser power, orientation of TiO2 films changed. ► With increasing laser power, microstructure of TiO2 films changed.
