| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1645576 | Materials Letters | 2013 | 4 Pages |
The effect of electric field on the growth and microstructure in doped amorphous silicon thin films during Ni induced lateral crystallization was investigated. With an applied electric field, n- and p-doped samples showed higher growth rate in the cathode and anode directions, respectively. The microstructure of the n- and p-doped samples showed bi-directional needle network and unidirectional-parallel structure, respectively. The reversal of the electric field effect in p-type doped sample was explained by employing charged vacancy migration. p-doped sample under an electric field can be useful for poly-Si TFT with its longer length, wider width, and higher growth rate.
► We examined the effect of electric field in doped amorphous silicon thin films. ► n-/p-doped samples showed higher growth rate in the cathode and anode directions. ► Microstructure and growth rate of the n-/p-doped samples were different. ► Electric field effect in p-type doped sample was reversed. ► Reversal of the e-field effect was explained by charged vacancy migration.
