| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1645583 | Materials Letters | 2013 | 5 Pages |
The domain structure of graphene films deposited by the chemical vapor deposition (CVD) process has a great influence on the electrical and physical properties. Here, we tackled the synthesis of increased domain size of single layer and bi-layer graphene along with few-layer graphene on Ni foil using solid camphor as a carbon source. To achieve this, effect of the composition of carrier gas for the evaporated camphor was investigated. Raman mapping and peak width (FWHM) analyses gave the insight of the quality and number of graphene layers. Optical and scanning electron microcopy studies show significance difference in domain structure of the synthesized graphene in different gas atmosphere. As confirmed by optical and scanning electron microscopes, the graphene domain grown with the carrier gas of Ar/H2 mixture was more than 10 times larger than those grown with pure Ar carrier gas.
Graphical abstractDomain structure of the graphene synthesized from solid camphor significantly influenced by the carrier gas composition and considerable enhancement in lateral domain size was achieved with an Ar/H2 mixture.Figure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Monolayer, bi-layer, and few-layer graphene were synthesized on Ni foil from solid camphor. ► Influence of gas composition on the graphene growth process is investigated. ► Optical and scanning electron microcopies show difference in domain structure in various gas atmospheres. ► Significant enhancement in graphene domain with the carrier gas of Ar/H2 is achieved. ► The results show that the lateral growth of graphene enhanced in Ar/H2 atmosphere.
