Article ID Journal Published Year Pages File Type
1645602 Materials Letters 2013 4 Pages PDF
Abstract

ZnO nanowires with high density are grown over zinc foil by thermal evaporation process at relatively low temperature. Electron microscopy studies confirmed that the as-grown nanowires are of single crystal hexagonal wurtzite structure, growing preferentially in the c-axis direction. The Raman spectrum of the ZnO nanowires shows an optical-phonon E2 mode at 440 cm−1 confirming good crystallinity for the grown nanowires. The field emission measurement indicated that ZnO nanowires have a turn-on field of 9.1 V/μm at current density of 0.001 μA/cm2.

► The annealing of the Zn foil gives optimum growth of nanowires (NWs) and very thin. ► The ZnO NWs grown on the Zn foil substrate are under compressive stress. ► The turn-on and emission current would be improved by growing well-aligned ZnO NWs array.

Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
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