| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1645610 | Materials Letters | 2013 | 4 Pages |
Abstract
⺠The crystal quality of nonpolar a-plane GaN was improved by in-situ surface modification which was introduced by growth interruption and roughening during the growth. ⺠Growth interruption facilitates the enhanced adatoms diffusion length and Ga droplet assisted growth as well. ⺠In-situ surface modification was an effective way to improve the crystal quality and isotropy of a-plane GaN without additional ex-situ process.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Keun-Man Song, Dae-Hun Kang, Chan-Soo Shin, Hogyoung Kim, Jong-Min Kim,