| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1645627 | Materials Letters | 2013 | 4 Pages |
SnO2-core/Ga2O3-shell nanowires were synthesized by one-step thermal evaporation of a mixture of SnO2, GaN and graphite powders at 1000 °C. Transmission electron microscopy and energy-dispersive X-ray spectroscopy concentration profiles of Sn, Ga, and O across the diameter of the nanowire indicated clearly that the nanowire consisted of a single crystal SnO2 core and a single crystal Ga2O3 shell with a shell layer thickness of ∼20 nm. A possible growth mechanism of SnO2-core/Ga2O3-shell nanowires in the one-step synthesis process is proposed.
► Core–shell nanowires were synthesized by one-step thermal evaporation process. ► The nanowire consisted of a single crystal SnO2 core and a single crystal Ga2O3 shell. ► A possible growth mechanism of the core–shell nanowires in the one-step synthesis process is proposed.
