| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1645661 | Materials Letters | 2013 | 4 Pages |
Abstract
The AlN whiskers with large yield were synthesized through the direct nitridation of Al column in high temperature plasma provided by arc discharge. The AlN whiskers show pyramid-like morphology with smooth or rough surface. The AlN whiskers exhibit a strong orange emission band at 612 nm with a Gaussian line shape, which might be attributed to the Al vacancy. The mechanism of defect luminescent is investigated.
► AlN whiskers were synthesized in high-temperature plasma. ► AlN whiskers exhibit a strong orange emission band at 612 nm with a Gaussian line. ► Luminescence can be attributed to the transition between the deep Al vacancy acceptor and valence band. ► The strong orange emission is related to the Al vacancy.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Longhai Shen, Nan Wang, Xuan Xiao,