| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1645790 | Materials Letters | 2013 | 4 Pages |
We study nitrogen (N) doping in cuprous oxide (Cu2O) films by radical oxidation of Cu films at low temperature (500 °C). The morphological, crystal, and optoelectronic properties of the Cu2O have been investigated by different N2 plasma treatment times. X-ray diffraction measurements show that Cu2O thin films grow on c-sapphire substrate with preferred (111) orientation. With increasing N2 plasma treatment time from 0 to 40 min, the optical bandgap energy is increased from 1.69 to 2.42 eV with p-type conductivity. From the Hall measurements, it is found that the hole density is increased from 1014 to 1015 cm−3 and the resistivity is decreased from 1879 to 780 Ω cm after N2 plasma treatment.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Oxidation of single Cu2O film at low temperature. ► First report on N-doping of Cu2O film by radical oxidation. ► Resistivity has a significant decrease and hole concentration increase to 1015 after N-doping. ► Bandgap has a significant blue-shift to 2.42 eV after N-doping.
