Layer-plus-wire growth of copper by small incident angle deposition

In this paper a small incident angle deposition (SIAD) technique is developed to fabricate copper wire-patterned films (CWPFs). The morphologies of the achieved CWPFs are characterized by a metalloscope and a scanning electron microscope. Based on these observations, a universal vertical relationship between the obliquely incident flux and the axial directions of copper wires on the surface of CWPFs is revealed. With further analysis of the morphological differences between CWPFs formed with and without substrate rotation, a new growth mode of layer-plus-wire growth induced by directional diffusion of adatoms during SIAD is proposed. In addition, the influences of substrate temperature on the morphologies of SIAD films are also studied.

► CWPFs were successfully fabricated by our developed SIAD. ► Influences of substrate rotation and temperature were revealed. ► Energetic states of SIAD adatoms were explored. ► A new growth mode of layer-plus-wire growth was proposed.