Synthesis and optoelectronic properties of p-type nitrogen doped ZnSe nanobelts

Single-crystal nitrogen (N) doped p-type ZnSe nanobelts (NBs) with zinc blende structure were synthesized in ammonia atmosphere via a thermal evaporation method. The p-type conductivity of ZnSe:N NBs was confirmed by field-effect transistors (FETs) based on individual NBs. High-performance photodetectors were constructed based on ZnSe:N NBs, which show high sensitivity and relatively fast response speed to the incident light with a sharp cut-off at 460 nm, corresponding to the band-gap of ZnSe. The high photosensitivity and relatively fast response speed are attributable to the high crystal quality of the ZnTe nanowires. These results reveal that such single-crystalline ZnSe NBs are excellent candidates for optoelectronic applications.

Graphical abstractZnSe:N NBs show high sensitivity to the incident light wavelength with a sharp cut-off at 460 nm, and good stability and reproducibility to the pulsed light with a fast response speed.Figure optionsDownload full-size imageDownload as PowerPoint slideHighlights► High quality p-type N-doped ZnSe nanobelts (NBs) were synthesized. ► ZnSe:N NB FETs and PDs were fabricated and studied. ► ZnSe:N NB PDs show a high responsivity of 2.4×104 AW−1 and photoconductive gain of 6.5×104. ► ZnSe:N NB PD has a fast response speed to the incident light with a sharp cut-off at 460 nm.