| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1645943 | Materials Letters | 2013 | 4 Pages |
In this paper, we report the synthesis of silicon oxide nanowire-embedded silicon (SONW-Si) nanocrystals (NCs) and their light emission characteristics. The SONW-Si NCs were formed by thermally annealing silicon-rich oxide nanowires (NWs) grown at low temperatures. The well-defined Si NCs were found to have grown in (111) direction and clearly displayed a higher density distribution at the center of the NWs. Photoluminescence (PL) measurements of the SONW-Si NCs showed an enhanced PL intensity compared to the silicon oxide film-embedded Si NCs, which may be related to the difference between the Si diffusion characteristics of SiOx NWs andfilms.
► Si nanocrystals (NCs) embedded in silicon oxide nanowires (NWs) were synthesized. ► The synthesis was carried out by annealing silicon-rich oxide (SiOx) NWs. ► The SiOx NWs were grown by PECVD using Zn as a catalyst at low temperature. ► We report enhanced photoluminescence intensity (NC density) compared to films.
