A GaN nanoneedle inorganic/organic heterojunction structure for optoelectronic devices

We studied an inorganic/organic hybrid heterostructure for optoelectronic device and applications. The structure was fabricated using inorganic material consisting of GaN nanoneedles and the hole-conducting polymer PEDOT:PSS. A PEDOT:PSS layer with a thickness of ∼50 nm was deposited using spin coating on GaN nanoneedles grown using an HVPE system. To elucidate the effects of the nanostructure, we compared the properties of the GaN nanoneedle/PEDOT:PSS structure with those of a GaN epilayer/PEDOT:PSS structure. The GaN nanoneedle/PEDOT:PSS structure showed a broader, shifted emission peak in the PL measurements compared with the GaN epilayer/PEDOT:PSS structure, as well as a lower turn-on voltage when the I–V characteristics were measured.

► We fabricated a hybrid heterostructure using GaN nanoneedles and hole-conducting polymer PEDOT:PSS. ► The PEDOT:PSS layer was deposited using the spin coating method on GaN nanoneedles grown by HVPE. ► The structure reduces the effort of achieving p-doping of GaN. ► We report the possibility for GaN-based polymer optoelectronic devices.