| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1646489 | Materials Letters | 2012 | 4 Pages |
Abstract
⺠β-Ga2O3 crystal epitaxial films have been prepared on MgO (111) substrates by MOCVD. ⺠The epitaxial relationship is β-Ga2O3 (2¯01) â MgO(111) with β-Ga2O3 [010] â MgO ã110ã. ⺠Six-fold domain structure exists inside the film. ⺠The average transmittance of the films in the visible wavelength range exceeded 91%.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Wei Mi, Jin Ma, Caina Luan, Yu Lv, Hongdi Xiao, Zhao Li,