| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1646496 | Materials Letters | 2012 | 4 Pages |
The thermal and electrical properties of Zn1.25Sb2Te3 film have been investigated for phase change memory (PCM) applications. Compared with the conventional Ge2Sb2Te5, Zn1.25Sb2Te3 film exhibits a higher crystallization temperature (∼200 °C), greater activation energy (2.71 eV), and better data retention of 10 years at 105 °C. In addition, higher crystalline resistance and better resistance contrast are helpful to reduce RESET current and achieve a higher On/OFF ratio of PCM, respectively. Raman spectra of crystalline thin films suggests that the local bonding arrangement around Sb atoms changes; Sb2Te3 component is thus mainly responsible for the phase transition in Zn1.25Sb2Te3 alloys.
► Zn1.25Sb2Te3 thin film has better thermal stability. ► Zn1.25Sb2Te3 thin film has higher crystalline resistance. ► Zn1.25Sb2Te3 has a high amorphous/crystalline resistance ratio of about 105. ► Raman spectra suggests that the local bonding arrangement around Sb atoms changes.
