| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1646585 | Materials Letters | 2012 | 4 Pages |
The aim of this work is to improve the dielectric properties of giant permittivity La1.5Sr0.5NiO4 ceramics. The microstructure and dielectric properties of Ga‐doped La1.5Sr0.5NiO4 ceramics prepared by a solid state reaction method were investigated. It was found that Ga3+ doping ions have a remarkable influence on the microstructural evolution. La1.5Sr0.5Ni1 − xGaxO4 (x = 0, 0.1, and 0.3) ceramics exhibited giant dielectric constant with ε′ ~ 3.3–4.7 × 105 at 20 °C and 1 kHz. Interestingly, ε′ of La1.5Sr0.5Ni1 − xGaxO4 ceramics was enhanced by doping with Ga3+; whereas, the loss tangent (tanδ) decreased significantly. Reduction of tanδ is attributed to the increase in the total resistance, which is mainly governed by the sample–electrode contact resistance, and caused by a decrease in dc conductivity.
► Ga3+ doping has an influence on the microstructure of La1.5Sr0.5Ni1 − xGaxO4 ceramics. ► The sintered La1.5Sr0.5Ni1 − xGaxO4 ceramics exhibited ε′ ~ 3.3–4.7 × 105. ► ε′ of La1.5Sr0.5Ni1 − xGaxO4 ceramics was increased by doping with Ga3+. ► tanδ was greatly reduced by doping with Ga3+.
