Article ID Journal Published Year Pages File Type
1646856 Materials Letters 2012 4 Pages PDF
Abstract

We herein report the synthesis of ZnO thin films on a pre-treated p-type silicon substrate by hydrothermal method and its electrical characterization. The as-synthesized nanostructures were characterized by field emission scanning electron microscopy, X-ray diffraction and current–voltage measurements. The presence of citric acid (CA) in the solution resulted in a morphological change from well-aligned nanorods to relatively smooth, compact thin films. As the concentration of the citric acid increased from 1 mM to 5 mM, the thickness of the films decreased from 1.3 μm to 320 nm. All the as-grown nanostructures are crystalline and are preferentially oriented along the c-axis. Finally, the typical current–voltage measurements indicated that the thin films have better rectification with lower leakage currents.

Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► ZnO thinfilms were synthesized using hydrothermal method. ► The thin films were grown on a pre-treated p-type silicon substrate. ► The presence of citric acid (CA) in the solution resulted in a morphological change. ► The thickness of the films decreases with increasing concentration of the CA. ► The thin films shows better rectification with lower leakage currents.

Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
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