| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1646935 | Materials Letters | 2012 | 4 Pages |
High quality Al–N co-doped ZnO (AZO:N) nanorods were synthesized using an ammonia-assisted hydrothermal method. The AZO:N nanorods exhibited p-type characteristics according to Hall Effect measurements, revealing low resistivity in the order of 10− 2 Ωcm. At room temperature, the electrical properties of the AZO:N nanorod showed a hole concentration, hole mobility and resistivity of 2.83 × 1018–2.28 × 1019 cm− 3, 2.19–2.86 cm2/Vs, and 1.01–9.58 × 10− 2 Ωcm, respectively. The I–V measurements of the p–n junction (p-AZO:N nanorods/n-Si) showed rectifying I–V characteristics, confirming that these AZO:N nanorods exhibit p-type conductivity. This study opens the possibility of developing highly conducting p-type AZO nanorods for optoelectronic devices. The effect of the ammonia concentration on the structural and electrical properties of AZO:N nanorods is discussed.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► N-doped p-type AZO nanorods were first prepared by hydrothermal growth. ► AZO:N nanorods showed highest aspect ratios ~ 60. ► p-type conductivity was achieved by ammonia-assisted hydrothermal growth. ► p–n junction (p-AZO:N/n-Si) revealed rectifying I–V characteristics.
