| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1647128 | Materials Letters | 2012 | 4 Pages |
The hydrothermal growth of ZnO nanowires on different surfaces including Gold (Au), Nickel (Ni), Silicon (Si) and Silicon Nitride (Si3N4) on a same silicon substrate is presented. It is shown that the growth rate of the nanowires is reduced on the metal surfaces compared to the Si and Si3N4 surfaces. The contamination of the growth solution by metal cations inducing local changes in the OH- ions concentration is put forward as a possible cause. Photoluminescence measurements show a larger defect band for the nanowires grown on Au compared to those grown on Si.
► ZnO nanowires have been grown hydrothermally on various surfaces in a same chip. ► ZnO NWs grown on the Si surfaces have much less defect than on metal surfaces. ► ZnO NWs are shorter on metal surfaces than semiconducting or insulating surfaces. ► The above phenomena are possibly due to ions released from metal surfaces.
