(101)-oriented ZnO nanoparticles fabricated in Si (100) by Zn ion implantation and thermal oxidation

ZnO nanoparticles (NPs) embedded in Si (100) substrate have been created by Zn ion implantation and post thermal annealing in oxygen atmosphere. Several techniques have been employed to investigate the formation of Zn NPs and their thermal evolution at elevated temperatures. Grazing X-ray diffraction results clearly show that ZnO NPs are effectively formed after 600 °C annealing, and they show a (101) preferential orientation. Cross-sectional transmission electron microscopy observations confirm that ZnO NPs with a narrow size distribution of 2–7 nm are formed within the near-surface region of about 35 nm in thickness. Photoluminescence measurement displays a strong emission band centered at 387 nm in the sample annealed at 600 °C.

► Narrow size distributed spherical ZnO NPs embedded in Si(100) are reached. ► The formed ZnO has a (101) preferential orientation. ► Photoluminescence spectroscopy exhibits a strong emission band centered at 387 nm.